STGP15M65DF2 - Trench gate field-stop IGBT

Product Overview

STMicroelectronics

Datasheet Details

Part number	STGP15M65DF2
Manufacturer	STMicroelectronics
File Size	765.67 KB
Description	Trench gate field-stop IGBT
Datasheet	STGP15M65DF2 Datasheet
Additional preview pages of the STGP15M65DF2 datasheet.

Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential.

Features

6 µs of short-circuit withstand time.
VCE(sat) = 1.55 V (typ. ) @ IC = 15 A.
Tight parameter distribution.
Safer paralleling.
Low thermal resistance.
Soft and very fast recovery antiparallel diode.

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Published: Mar 22, 2016 |