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STGP20IH65DF - IGBT

General Description

The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation.

A freewheeling diode with a low drop forward voltage is included.

Key Features

  • Designed for soft-commutation.
  • Maximum junction temperature: TJ = 175 °C.
  • VCE(sat) = 1.55 V (typ. ) @ IC = 20 A.
  • Minimized tail current.
  • Tight parameter distribution.
  • Low thermal resistance.
  • Low drop voltage freewheeling co-packaged diode.
  • Positive VCE(sat) temperature coefficient.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGP20IH65DF Datasheet Trench gate field-stop 650 V, 20 A, soft-switching IH series IGBT in a TO‑220 package TAB TO-220 1 23 C(2, TAB) G(1) E(3) NG1E3C2T Features • Designed for soft-commutation • Maximum junction temperature: TJ = 175 °C • VCE(sat) = 1.55 V (typ.) @ IC = 20 A • Minimized tail current • Tight parameter distribution • Low thermal resistance • Low drop voltage freewheeling co-packaged diode • Positive VCE(sat) temperature coefficient Applications • Induction heating • Resonant converters • Microwave ovens Description The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation.