STGP20M65DF2 - low-loss IGBT

Product Overview

STMicroelectronics

Datasheet Details

Part number	STGP20M65DF2
Manufacturer	STMicroelectronics
File Size	515.89 KB
Description	low-loss IGBT
Datasheet	STGP20M65DF2 Datasheet
Additional preview pages of the STGP20M65DF2 datasheet.

Product details

Description

E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.Product status link STGP20M65DF2 Product summary Order

Features

High short-circuit withstand time.
VCE(sat) = 1.55 V (typ. ) @ IC = 20 A.
Tight parameters distribution.
Safer paralleling.
Low thermal resistance.
Soft and very fast recovery antiparallel diode G(1) C(2, TAB).

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Published: Mar 25, 2020 |