STMicroelectronics STGP20M65DF2
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.| Part No. | STGP20M65DF2 |
|---|---|
| Datasheet | STGP20M65DF2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 20A low-loss IGBT |
| Buy | Stock & Price |
FEATURES
● High short-circuit withstand time● VCE(sat) = 1.55 V (typ.) @ IC = 20 A
● Tight parameters distribution
● Safer paralleling
● Low thermal resistance
● Soft and very fast recovery antiparallel diode G(1) C(2, TAB)
APPLICATIONS
● Motor control● UPS
● PFC
● General-purpose inverters
DESCRIPTION
E(3) NG1E3C2T Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGP20M65DF2 Product summary Order code STGP20M65DF2 Marking G20M65DF2 Package TO-220 Packing Tube DS11374 - Rev 3 - October 2018 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(1) Pulsed collector current VGE Gate-emitter voltage Continuous forward current at TC = 25 °C IF Continuous forw...
