STGP6M65DF2 Key Features
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 6 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
| Part Number | Description |
|---|---|
| STGP100N30 | Fast IGBT |
| STGP10H60DF | 600V 10A IGBT |
| STGP10M65DF2 | Trench gate field-stop IGBT |
| STGP10NC60KD | 600V short-circuit rugged IGBT |
| STGP15H60DF | Trench gate field-stop IGBT |