Part STGW40H65DFB
Description IGBT
Manufacturer STMicroelectronics
Size 498.84 KB
STMicroelectronics
STGW40H65DFB

Overview

  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
  • Tight parameter distribution
  • Safe paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode