STGW40H65DFB-4 Datasheet | STMicroelectronics

Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features TO247-4 2 34 1 C(1, TAB) - Maximum junction temperature: TJ = 175 °C - High speed switching series - Minimized tail current - Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A - Tight parameter distribution - Safe paralleling - Positive VCE(sat) temperature coefficient - Low thermal resistance - Very fast soft recovery antiparallel diode - Excellent switching performance thanks to the extra driving kelvin pin G(4) K(3) Applications - Photovoltaic inverters E(2) - High frequency converters NG4K3E2C1_TAB Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum promise between conduction and switching loss to maximize the efficiency of any frequency converter. A faster switching event can be achieved by the Kelvin pin, which separates power path from driving signal. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGW40H65DFB-4 Product summary Order code Marking G40H65DFB Package TO247-4 Packing...