STGW40H65DFB-4 Datasheet IGBT

Manufacturer: STMicroelectronics

STGW40H65DFB-4 igbt by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	STGW40H65DFB-4
Manufacturer	STMicroelectronics
File Size	471.95 KB
Description	IGBT
Datasheet	STGW40H65DFB-4 Datasheet

General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

A faster switching event can be achieved by the Kelvin pin, which separates power path from driving signal.

Overview

STGW40H65DFB-4 Datasheet Trench gate field-stop 650 V, 40 A high speed HB series.

Key Features

TO247-4 2 34 1 C(1, TAB).
Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 40 A.
Tight parameter distribution.
Safe paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Very fast soft recovery antiparallel diode.
Excellent switching performance thanks to the extra driving kelv.

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