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STGW40M120DF3 - Trench gate field-stop IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

Features

  •    72 72ORQJOHDGV Figure 1.Internal schematic diagram.
  • 10 µs of short-circuit withstand time.
  • VCE(sat) = 1.85 V (typ. ) @ IC = 40 A.
  • Tight parameters distribution.
  • Safer paralleling.
  • Low thermal resistance.
  • Soft and fast recovery antiparallel diode.

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STGW40M120DF3 STGWA40M120DF3 Trench gate field-stop IGBT, M series 1200 V, 40 A low loss Datasheet - production data Features    72 72ORQJOHDGV Figure 1.Internal schematic diagram • 10 µs of short-circuit withstand time • VCE(sat) = 1.85 V (typ.) @ IC = 40 A • Tight parameters distribution • Safer paralleling • Low thermal resistance • Soft and fast recovery antiparallel diode Applications • Industrial drives • UPS • Solar • Welding & RU7$% Description *  (  This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential.
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