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STGW40M120DF3 Datasheet Trench gate field-stop IGBT

Manufacturer: STMicroelectronics

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General Description

*  (  This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential.

Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Overview

STGW40M120DF3 STGWA40M120DF3 Trench gate field-stop IGBT, M series 1200 V, 40 A low loss Datasheet - production.

Key Features

  •    72 72ORQJOHDGV Figure 1.Internal schematic diagram.
  • 10 µs of short-circuit withstand time.
  • VCE(sat) = 1.85 V (typ. ) @ IC = 40 A.
  • Tight parameters distribution.
  • Safer paralleling.
  • Low thermal resistance.
  • Soft and fast recovery antiparallel diode.

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