STGW40M120DF3 Datasheet | STMicroelectronics

STGW40M120DF3 STGWA40M120DF3 Trench gate field-stop IGBT, M series 1200 V, 40 A low loss - production data Features 72 72ORQJOHDGV Figure 1.Internal schematic diagram - 10 µs of short-circuit withstand time - VCE(sat) = 1.85 V (typ.) @ IC = 40 A - Tight parameters distribution - Safer paralleling - Low thermal resistance - Soft and fast recovery antiparallel diode Applications - Industrial drives - UPS - Solar - Welding &RU7$% Description - ( This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum promise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Order code STGW40M120DF3 STGWA40M120DF3 Table 1. Device summary Marking Package G40M120DF3 TO-247 G40M120DF3 TO-247 long...