STGWT30H60DFB Datasheet - STMicroelectronics

30A high speed HB series IGBT

STGWT30H60DFB Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A

* Tight parameter distribution

* Safe paralleling

* Positive VCE(sat) temperature

STGWT30H60DFB General Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the s.

STGWT30H60DFB Datasheet (678.93 KB)

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STGWT30H60DFB

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STMicroelectronics ↗

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678.93 KB

Description:

30a high speed hb series igbt.
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Datasheet Trench gate field-stop 600 V, 30 A high speed HB series IGBT 3 2 1 TO-247 TAB 3 2 1 TO-247 long.

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STGWT30H60DFB 30A high speed series IGBT STMicroelectronics

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STGWT30H60DFB Features

STGWT30H60DFB General Description

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