STGYA75H120DF2 Datasheet, STMicroelectronics

STGYA75H120DF2 igbt equivalent, igbt.

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Features and benefits

* Maximum junction temperature: TJ = 175 °C
* 5 μs of short-circuit withstand time
* VCE(sat) = 2.1 V (typ.) @ IC = 75 A
* Tight parameter distribution

Application

* UPS
* Solar inverters
* Welding
* PFC Description This device is IGBT developed using an advanced prop.

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