STG1
STG1 is N-channel Power MOSFET manufactured by STMicroelectronics.
STT6N3LLH6
N-channel 30 V, 0.021 Ω typ., 6 A STrip FET™ VI Deep GATE™ Power MOSFET in a SOT23-6L package
- production data
4 5 6
3 2 1
SOT23-6L
Features
Order code STT6N3LLH6
VDSS RDS(on) max ID PTOT
0.025 Ω
(VGS= 10 V)
30 V
6 A 1.6 W
0.036 Ω
(VGS= 4.5 V)
- RDS(on)
- Qg industry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
Figure 1. Internal schematic diagram
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET th developed using the 6 generation of STrip FET™ Deep GATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Order code STT6N3LLH6
Table 1. Device summary
Marking
Package
SOT23-6L...
