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STG1 - N-channel Power MOSFET

General Description

developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Key Features

  • Order code STT6N3LLH6 VDSS RDS(on) max ID PTOT 0.025 Ω (VGS= 10 V) 30 V 6 A 1.6 W 0.036 Ω (VGS= 4.5 V).
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power losses Figure 1. Internal schematic diagram.

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Full PDF Text Transcription for STG1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STG1. For precise diagrams, and layout, please refer to the original PDF.

STT6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet - production data 4 5 6 3 2 1 SOT23-6L Features Order cod...

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ge Datasheet - production data 4 5 6 3 2 1 SOT23-6L Features Order code STT6N3LLH6 VDSS RDS(on) max ID PTOT 0.025 Ω (VGS= 10 V) 30 V 6 A 1.6 W 0.036 Ω (VGS= 4.5 V) • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power losses Figure 1. Internal schematic diagram Applications • Switching applications Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Order code STT6N3LLH6 Table 1.

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