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STG15M120F3D7 - IGBT

General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.

Key Features

  • 10 µs of short-circuit withstanding time.
  • Low VCE(sat) = 1.85 V (typ. ) @ IC = 15 A.
  • Positive VCE(sat) temperature coefficient.
  • Tight parameter distribution.
  • Maximum junction temperature: TJ = 175 °C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STG15M120F3D7 Datasheet Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing C G Features • 10 µs of short-circuit withstanding time • Low VCE(sat) = 1.85 V (typ.) @ IC = 15 A • Positive VCE(sat) temperature coefficient • Tight parameter distribution • Maximum junction temperature: TJ = 175 °C Applications E • Industrial motor control EGCD • Industrial drives • Solar inverters • Uninterruptable power supplies (UPS) • PFC converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.