STG15M120F3D7 Key Features
- 10 µs of short-circuit withstanding time
- Low VCE(sat) = 1.85 V (typ.) @ IC = 15 A
- Positive VCE(sat) temperature coefficient
- Tight parameter distribution
- Maximum junction temperature: TJ = 175 °C
- Part: STG15M120F3D7
- Description: IGBT
- Manufacturer: STMicroelectronics
- Size: 258.50 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STG15M120F3D8 | IGBT |
| STG1 | N-channel Power MOSFET |
| STG1218 | a quad channel analog switch |
| STG1703 | Dual Clock Synthesis Palette Dac |
| STG200G65FD8AG | IGBT |