STG15M120F3D7 - IGBT

Product Overview

STMicroelectronics

Datasheet Details

Part number	STG15M120F3D7
Manufacturer	STMicroelectronics
File Size	258.50 KB
Description	IGBT
Datasheet	STG15M120F3D7 Datasheet
Additional preview pages of the STG15M120F3D7 datasheet.

Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.

Features

10 µs of short-circuit withstanding time.
Low VCE(sat) = 1.85 V (typ. ) @ IC = 15 A.
Positive VCE(sat) temperature coefficient.
Tight parameter distribution.
Maximum junction temperature: TJ = 175 °C.

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Published: Mar 7, 2023 |