STG200G65FD8AG Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling...
STG200G65FD8AG Key Features
- AEC-Q101 qualified
- Low-loss series IGBT
- Low VCE(sat) = 1.52 V (typ.) at IC = 200 A
- Positive VCE(sat) temperature coefficient
- Tight parameter distribution
- Maximum junction temperature: TJ = 175 °C