Datasheet Details
| Part number | STG200M65F2D8AG |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 301.13 KB |
| Description | IGBT |
| Datasheet |
 STG200M65F2D8AG Datasheet
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General Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Key Features
- AEC-Q101 qualified.
- Low-loss series IGBT G.
- Low VCE(sat) = 1.55 V (typ. ) at IC = 200 A.
- Positive VCE(sat) temperature coefficient.
- Tight parameter distribution.
- Maximum junction temperature: TJ = 175 °C E.
- 6 µs minimum short-circuit withstanding time at TJ = 150 °C EGCD.