STG200M65F2D8AG Datasheet | STMicroelectronics

Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing Features - AEC-Q101 qualified - Low-loss series IGBT - Low VCE(sat) = 1.55 V (typ.) at IC = 200 A - Positive VCE(sat) temperature coefficient - Tight parameter distribution - Maximum junction temperature: TJ = 175 °C - 6 µs minimum short-circuit withstanding time at TJ = 150 °C EGCD Applications - Main inverter (electric traction) Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STG200M65F2D8AG Product summary Order code STG200M65F2D8AG 650 V 200 A Die size 9.73 x 10.23 mm Packing D8 DS11201 - Rev 5 - November 2022 For further information contact your local STMicroelectronics sales office. .st. Mechanical parameters Mechanical parameters Table 1. Mechanical...