STGYA120M65DF2
STGYA120M65DF2 is IGBT manufactured by STMicroelectronics.
Trench gate field-stop, 650 V, 120 A, low-loss M series IGBT in a Max247 long leads package
1 23 TAB
1 2 3
Max247 long leads
C(2, TAB)
G(1)
Features
- Maximum junction temperature: TJ = 175 °C
- 6 μs of minimum short-circuit withstand time
- VCE(sat) = 1.65 V (typ.) @ IC = 120 A
- Tight parameter distribution
- Safer paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Soft- and fast-recovery antiparallel diode
Applications
- Motor control
- UPS
- PFC
- General purpose inverter
Description
E(3)
NG1E3C2T
This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of...
