STGYA120M65DF2 - IGBT

Product Overview

STMicroelectronics

Datasheet Details

Part number	STGYA120M65DF2
Manufacturer	STMicroelectronics
File Size	2.03 MB
Description	IGBT
Datasheet	STGYA120M65DF2 Datasheet
Additional preview pages of the STGYA120M65DF2 datasheet.

Product details

Description

E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate field- stop structure.The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.Product status link STGYA120M65DF2 Product sum

Features

Maximum junction temperature: TJ = 175 °C.
6 μs of minimum short-circuit withstand time.
VCE(sat) = 1.65 V (typ. ) @ IC = 120 A.
Tight parameter distribution.
Safer paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Soft- and fast-recovery antiparallel diode.

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Published: Jan 7, 2017 |