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STGYA75H120DF2 Datasheet IGBT

Manufacturer: STMicroelectronics

Overview: STGYA75H120DF2 Datasheet Trench gate field-stop, 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads package TAB 1 23 TAB 1 2 3 Max247 long leads C(2, TAB) G(1) E(3).

General Description

This device is IGBT developed using an advanced proprietary trench gate fieldstop structure.

This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters.

Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • 5 μs of short-circuit withstand time.
  • VCE(sat) = 2.1 V (typ. ) @ IC = 75 A.
  • Tight parameter distribution.
  • Positive VCE(sat) temperature coefficient.
  • Low thermal resistance.
  • Very fast recovery antiparallel diode.

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