STGYA75H120DF2 Description
This device is IGBT developed using an advanced proprietary trench gate fieldstop structure. This device is part of the H series of IGBTs, which represent an optimum promise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
STGYA75H120DF2 Key Features
- Maximum junction temperature: TJ = 175 °C
- 5 μs of short-circuit withstand time
- VCE(sat) = 2.1 V (typ.) @ IC = 75 A
- Tight parameter distribution
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Very fast recovery antiparallel diode