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STH110N10F7-6 Datasheet

N-channel Power MOSFET

Manufacturer: STMicroelectronics

This datasheet includes multiple variants, all published together in a single manufacturer document.

STH110N10F7-6 Overview

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onresistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

STH110N10F7-6 Key Features

  • Among the lowest RDS(on) on the market
  • Excellent figure of merit (FoM)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness

STH110N10F7-6 Distributor