Datasheet Summary
N-channel 68 V, 0.0053 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a H2PAK-2 package
- production data
Features
TAB 2 3 1
H2PAK-2
Figure 1. Internal schematic diagram
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Order code VDS RDS(on)max. ID PTOT STH110N7F6-2 68 V 0.0063 Ω 110 A 176 W
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
6
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Order code STH110N7F6-2
Table 1. Device summary
Marking...