Datasheet Details
| Part number | STH110N7F6-2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 911.20 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet |
 STH110N7F6-2 Datasheet
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General Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.
The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Table 1.
Key Features
- TAB 2 3 1 H2PAK-2 Figure 1. Internal schematic diagram ' 7$% .
- Order code VDS RDS(on)max. ID PTOT STH110N7F6-2 68 V 0.0063 Ω 110 A 176 W.
- Very low on-resistance.
- Very low gate charge.
- High avalanche ruggedness.
- Low gate drive power loss.