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STH110N7F6-2 Datasheet

N-channel Power MOSFET

Manufacturer: STMicroelectronics

STH110N7F6-2 Overview

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6   $0Y Order code STH110N7F6-2 Table.

STH110N7F6-2 Key Features

  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss

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