STH140N6F7-2 Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STH140N6F7-2 STH140N6F7-6 Table 1: Contents Contents STH140N6F7-2, STH140N6F7-6 1 Electrical ratings...
STH140N6F7-2 Key Features
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
