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STH140N6F7-2 - N-CHANNEL POWER MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • Order code STH140N6F7-2 STH140N6F7-6 VDS 60 V RDS(on) max. 0.0032 Ω ID 80 A PTOT 158 W.
  • Among the lowest RDS(on) on the market.
  • Excellent figure of merit (FoM).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

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Full PDF Text Transcription for STH140N6F7-2 (Reference)

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STH140N6F7-2, STH140N6F7-6 N-channel 60 V, 0.0028 Ω typ., 80 A STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet - production data Figure 1: Internal s...

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and H²PAK-6 packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code STH140N6F7-2 STH140N6F7-6 VDS 60 V RDS(on) max. 0.0032 Ω ID 80 A PTOT 158 W  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

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