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STH200N55F3-2 - Power MOSFETs

Description

This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance.

Figure 1.

Table 1.

Features

  • Type STH200N55F3-2 VDSS 55 V RDS(on) max < 2.6 mΩ ID (1) 160 A 2 1. Current limited by package.
  • Ultra low on-resistance 100% avalanche tested 3 1 3.

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www.DataSheet4U.com STH200N55F3-2 N-channel 55 V, 1.8 mΩ, 160 A, H2PAK STripFET™ III Power MOSFET Preliminary data Features Type STH200N55F3-2 VDSS 55 V RDS(on) max < 2.6 mΩ ID (1) 160 A 2 1. Current limited by package ■ ■ Ultra low on-resistance 100% avalanche tested 3 1 3 Application ■ H²PAK Switching applications Description This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance. Figure 1. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order code Marking 200N55F3 Package H²PAK Packaging Tape and reel STH200N55F3-2 July 2009 Doc ID 16085 Rev 1 1/11 www.st.
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