STH260N4LF7-2 Overview
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Obsole6 $0Y Order code STH260N4LF7-2 STH260N4LF7-6 Table 1. Device summary Marking Package 260N4LF7 H2PAK-2 260N4LF7 H2PAK-6.
STH260N4LF7-2 Key Features
- O' 7$%
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness