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STH22N95K5-2AG - Automotive-grade N-channel Power MOSFET

General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Overview

STH22N95K5-2AG Datasheet Automotive-grade N-channel 950 V, 280 mΩ typ., 17.

Key Features

  • Order code STH22N95K5-2AG VDS 950 V RDS(on) max. 330 mΩ ID 17.5 A PTOT 250 W.
  • AEC-Q101 qualified.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.