STH240N10F7-2
STH240N10F7-2 is N-CHANNEL POWER MOSFET manufactured by STMicroelectronics.
STH240N10F7-2, STH240N10F7-6
N-channel 100 V, 2 mΩ typ., 180 A STrip FET™ F7 Power MOSFETs in an H²PAK-2 and H²PAK-6 packages
TAB 23 1
H2 PAK-2
7 1 H2 PAK-6
Features
Order code
RDS(on) max.
STH240N10F7-2 STH240N10F7-6
100 V
2.5 mΩ
- Among the lowest RDS(on) on the market
- Excellent Fo M (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
ID 180 A
D(TAB)
D(TAB) Description
G(1)
G(1)
These N-channel Power MOSFETs utilize STrip FET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
S(2, 3) for
H2PAK-2
S(2, 3, 4, 5, 6, 7) for H2PAK-6
N-CHG1DTABS23_2_6
Product status
STH240N10F7-6
Product summary
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