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STH240N10F7-2 - N-CHANNEL POWER MOSFET

General Description

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Overview

STH240N10F7-2, STH240N10F7-6 Datasheet N-channel 100 V, 2 mΩ typ.

Key Features

  • Order code VDS RDS(on) max. STH240N10F7-2 STH240N10F7-6 100 V 2.5 mΩ.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness ID 180 A D(TAB) D(TAB).