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STH245N75F3-6 - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using STripFET™ F3 technology.

It is designed to minimize on-resistance and gate charge to provide superior switching performance.

Table 1.

Features

  • TAB 1 H2PAK-6 7 Figure 1. Internal schematic diagram Order code STH245N75F3-6 VDS 75 V RDS(on) max. ID 3.0 mΩ 180 A.
  • Designed for automotive.

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Datasheet Details

Part number STH245N75F3-6
Manufacturer STMicroelectronics
File Size 424.51 KB
Description N-channel Power MOSFET
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STH245N75F3-6 Automotive-grade N-channel 75 V, 2.6 mΩ typ., 180 A STripFET™ F3 Power MOSFET in a H²PAK-6 package Datasheet - production data Features TAB 1 H2PAK-6 7 Figure 1. Internal schematic diagram Order code STH245N75F3-6 VDS 75 V RDS(on) max. ID 3.0 mΩ 180 A • Designed for automotive applications and AEC-Q101 qualified • Conduction losses reduced • Low profile, very low parasitic inductance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Order code STH245N75F3-6 Table 1.
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