STH240N75F3-2 Datasheet | STMicroelectronics

STH240N75F3-2, STH240N75F3-6 N-channel 75 V, 2.6 mΩ typ., 180 A STrip FET™ III Power MOSFET in H²PAK-2 and H²PAK-6 packages - production data Features Order code STH240N75F3-2 STH240N75F3-6 VDSS 75 V RDS(on) max. < 3.0 mΩ 180 A - Conduction losses reduced - Low profile, very low parasitic inductance Applications - Switching application Description These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STrip FET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. H2PAK-2 H2PAK-6 Figure 1. Internal schematic diagram D(TAB) D(TAB) G(1) G(1) Table 1. Device summary Order code STH240N75F3-2 STH240N75F3-6 Marking 240N75F3 S(2, 3) H2PAK-2 Package H2PAK-2 H2PAK-6 S(2, 3, 4, 5, 6, 7) H2PAK-6 AM14551V1 Packaging Tape and...