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STH240N10F7-6 - N-CHANNEL POWER MOSFET

This page provides the datasheet information for the STH240N10F7-6, a member of the STH240N10F7-2 N-CHANNEL POWER MOSFET family.

Description

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code VDS RDS(on) max. STH240N10F7-2 STH240N10F7-6 100 V 2.5 mΩ.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness ID 180 A D(TAB) D(TAB).

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Datasheet preview – STH240N10F7-6

Datasheet Details

Part number STH240N10F7-6
Manufacturer STMicroelectronics
File Size 629.10 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STH240N10F7-6 Datasheet
Additional preview pages of the STH240N10F7-6 datasheet.

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Full PDF Text Transcription

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STH240N10F7-2, STH240N10F7-6 Datasheet N-channel 100 V, 2 mΩ typ., 180 A STripFET™ F7 Power MOSFETs in an H²PAK-2 and H²PAK-6 packages TAB 23 1 H2 PAK-2 TAB 7 1 H2 PAK-6 Features Order code VDS RDS(on) max. STH240N10F7-2 STH240N10F7-6 100 V 2.5 mΩ • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 180 A D(TAB) D(TAB) Description G(1) G(1) These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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