STH200N10WF7-2 Overview
This N-channel Power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA bined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations. STH200N10WF7-2 Electrical ratings 1 Electrical ratings Table.
STH200N10WF7-2 Key Features
- Best-in-class SOA capability
- High current surge capability
- Extremely low on-resistance