STH200N10WF7-2 Datasheet | STMicroelectronics

N-channel 100 V, 3.2 mΩ typ., 180 A, STrip FET F7 Power MOSFET in an H2PAK-2 package TAB 23 1 H2PAK-2 D(TAB) G(1) S(2, 3) DTG1S23NZ Features Order code 100 V - Best-in-class SOA capability - High current surge capability - Extremely low on-resistance RDS(on) max. 4.0 mΩ ID 180 A PTOT 340 W Applications - Hot-swap - Electronic fuse - Load switch - In-rush current limiter Description This N-channel Power MOSFET utilizes the STrip FET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA bined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations. Product status link STH200N10WF7-2 Product summary Order code Marking 200N10WF7 Package H²PAK-2 Packing Tape and...