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STH200N10WF7-2 - N-channel Power MOSFET

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General Description

This N-channel Power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance.

Overview

STH200N10WF7-2 Datasheet N-channel 100 V, 3.2 mΩ typ., 180 A, STripFET F7 Power MOSFET in an H2PAK-2 package TAB 23 1 H2PAK-2 D(TAB) G(1) S(2, 3).

Key Features

  • Order code VDS STH200N10WF7-2 100 V.
  • Best-in-class SOA capability.
  • High current surge capability.
  • Extremely low on-resistance RDS(on) max. 4.0 mΩ ID 180 A PTOT 340 W.

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