STH270N8F7-2
Features
Order codes
RDS(on) max.
STH270N8F7-2 STH270N8F7-6
80 V
0.0021 Ω
STP270N8F7
0.0025 Ω
- Among the lowest RDS(on) on the market
- Excellent Fo M (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
ID 180 A
G(1)
G(1)
S(2, 3, 4, 5, 6, 7)
H2PAK-2, H2PAK-6
S(3)
TO-220
H2PAK_2_6_N-CHG1DTABS234567_TO-220_N-CHG1D2TABS3
Applications
- Switching applications
Description
These N-channel Power MOSFETs utilize STrip FET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Product status links STH270N8F7-2 STH270N8F7-6 STP270N8F7
DS9394
- Rev 5
- March 2021 For further information contact your local STMicroelectronics sales office.
.st.
STH270N8F7-2, STH270N8F7-6, STP270N8F7
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Drain-source...
