STH270N8F7-2 Overview
Description
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status links STH270N8F7-2 STH270N8F7-6 STP270N8F7 DS9394 - Rev 5 - March 2021 For further information contact your local STMicroelectronics sales office.
Key Features
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- H2PAK-2, H2PAK-6 S(3) TO-220 H2PAK_2_6_N-CHG1DTABS234567_TO-220_N-CHG1D2TABS3
