Datasheet Details
| Part number | STH270N8F7-2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 501.99 KB |
| Description | N-channel MOSFET |
| Datasheet |
 STH270N8F7-2 Datasheet
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General Description
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Key Features
- Order codes VDS RDS(on) max. STH270N8F7-2 STH270N8F7-6 80 V 0.0021 Ω STP270N8F7 0.0025 Ω.
- Among the lowest RDS(on) on the market.
- Excellent FoM (figure of merit).
- Low Crss/Ciss ratio for EMI immunity.
- High avalanche ruggedness ID 180 A G(1) G(1) S(2, 3, 4, 5, 6, 7) H2PAK-2, H2PAK-6 S(3) TO-220 H2PAK_2_6_N-CHG1DTABS234567_TO-220_N-CHG1D2TABS3.