STH275N8F7-2AG Datasheet | STMicroelectronics

Features Order code STH275N8F7-2AG STH275N8F7-6AG VDS RDS(on) max. 80 V 2.1 mΩ 180 A - AEC-Q101 qualified - Among the lowest RDS(on) on the market - Excellent Fo M (figure of merit) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness Applications - Switching applications Description These N-channel Power MOSFETs utilize STrip FET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STH275N8F7-2AG STH275N8F7-6AG Table 1: Device summary Marking Package 275N8F7 H²PAK-2 H²PAK-6 Packing Tape and reel January 2017 Doc ID027223 Rev 4 This is information on a product in full production. 1/18...