STH275N8F7-2AG Description
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STH275N8F7-2AG STH275N8F7-6AG Table 1: Device summary Marking Package 275N8F7 H²PAK-2 H²PAK-6 Packing Tape and reel January 2017 DocID027223 Rev 4 This is...
STH275N8F7-2AG Key Features
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness