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STH275N8F7-6AG Datasheet N-CHANNEL POWER MOSFET

Manufacturer: STMicroelectronics

Download the STH275N8F7-6AG datasheet PDF. This datasheet also includes the STH275N8F7-2AG variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (STH275N8F7-2AG-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

General Description

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Order code STH275N8F7-2AG STH275N8F7-6AG Table 1: Device summary Marking Package 275N8F7 H²PAK-2 H²PAK-6 Packing Tape and reel January 2017 DocID027223 Rev 4 This is information on a product in full production.

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Overview

STH275N8F7-2AG, STH275N8F7-6AG Automotive-grade N-channel 80 V, 1.7 mΩ typ.

Key Features

  • Order code STH275N8F7-2AG STH275N8F7-6AG VDS RDS(on) max. ID 80 V 2.1 mΩ 180 A.
  • AEC-Q101 qualified.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

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