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STH275N8F7-6AG - N-CHANNEL POWER MOSFET

This page provides the datasheet information for the STH275N8F7-6AG, a member of the STH275N8F7-2AG N-CHANNEL POWER MOSFET family.

Description

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code STH275N8F7-2AG STH275N8F7-6AG VDS RDS(on) max. ID 80 V 2.1 mΩ 180 A.
  • AEC-Q101 qualified.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

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Datasheet preview – STH275N8F7-6AG

Datasheet Details

Part number STH275N8F7-6AG
Manufacturer STMicroelectronics
File Size 718.04 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STH275N8F7-6AG Datasheet
Additional preview pages of the STH275N8F7-6AG datasheet.

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Full PDF Text Transcription

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STH275N8F7-2AG, STH275N8F7-6AG Automotive-grade N-channel 80 V, 1.7 mΩ typ., 180 A, STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6 Datasheet - production data Figure 1: Internal schematic diagram Features Order code STH275N8F7-2AG STH275N8F7-6AG VDS RDS(on) max. ID 80 V 2.1 mΩ 180 A  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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