STH275N8F7-2AG
STH275N8F7-2AG is N-CHANNEL POWER MOSFET manufactured by STMicroelectronics.
STH275N8F7-2AG, STH275N8F7-6AG
Automotive-grade N-channel 80 V, 1.7 mΩ typ., 180 A, STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6
- production data
Figure 1: Internal schematic diagram
Features
Order code STH275N8F7-2AG STH275N8F7-6AG
VDS RDS(on) max.
80 V
2.1 mΩ
180 A
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Applications
- Switching applications
Description
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and...
