Datasheet Details
| Part number | STH315N10F7-2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 792.64 KB |
| Description | Automotive-grade N-channel 100V 180A Power MOSFET |
| Datasheet |
 STH315N10F7-2 Datasheet
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General Description
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Key Features
- TAB 23 1 H2 PAK-2 TAB 7 1 H2 PAK-6 D(TAB) D(TAB) Order code STH315N10F7-2 STH315N10F7-6 VDS 100 V RDS(on) max. 2.3 mΩ.
- AEC-Q101 qualified.
- Among the lowest RDS(on) on the market.
- Excellent FoM (figure of merit).
- Low Crss/Ciss ratio for EMI immunity.
- High avalanche ruggedness ID 180 A G(1) G(1).