STH315N10F7-2
Features
TAB 23 1
H2 PAK-2
7 1 H2 PAK-6
D(TAB)
D(TAB)
Order code STH315N10F7-2 STH315N10F7-6
VDS 100 V
RDS(on) max. 2.3 mΩ
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent Fo M (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
ID 180 A
G(1)
G(1)
Applications
S(2, 3) for
H2PAK-2
S(2, 3, 4, 5, 6, 7) for
H 2PAK-6
N-CHG1DTABS23_2_6
- Switching applications
Description
These N-channel Power MOSFETs utilize STrip FET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Product status STH315N10F7-2 STH315N10F7-6
Product summary
Order code
Marking
315N10F7
Package
H²PAK-2
Packing
Tape and reel
Order code
STH315N10F7-6
Marking
315N10F7...
