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STH320N4F6-2 - N-channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.

Figure 1.

Key Features

  • STH320N4F6-2, STH320N4F6-6 N-channel 40 V, 1.1 mΩ typ. , 200 A, H²PAK-2, H²PAK-6 STripFET™ VI DeepGATE™ Power MOSFET Datasheet.
  • production data Order codes STH320N4F6-2 STH320N4F6-6 VDS RDS(on) max 40 V 1.3 mΩ 1. Current limited by package.
  • Standard threshold drive.
  • 100% avalanche tested ID(1) 200 A.

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Features STH320N4F6-2, STH320N4F6-6 N-channel 40 V, 1.1 mΩ typ., 200 A, H²PAK-2, H²PAK-6 STripFET™ VI DeepGATE™ Power MOSFET Datasheet — production data Order codes STH320N4F6-2 STH320N4F6-6 VDS RDS(on) max 40 V 1.3 mΩ 1. Current limited by package. ■ Standard threshold drive ■ 100% avalanche tested ID(1) 200 A Applications ■ Automotive switching applications TAB TAB 2 3 1 H2PAK-2 1 H2PAK-6 7 Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram D(TAB) D(TAB) G(1) G(1) Table 1.