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STH400N4F6-2 - N-channel Power MOSFET

Description

developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.

Features

  • TAB 2 3 1 H2PAK-2 TAB 7 1 H2PAK-6 Order codes VDS RDS(on) max ID STH400N4F6-2 STH400N4F6-6 40 V 1.15 mΩ 180 A.
  • Designed for automotive.

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Datasheet preview – STH400N4F6-2

Datasheet Details

Part number STH400N4F6-2
Manufacturer STMicroelectronics
File Size 463.35 KB
Description N-channel Power MOSFET
Datasheet download datasheet STH400N4F6-2 Datasheet
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Full PDF Text Transcription

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STH400N4F6-2, STH400N4F6-6 Automotive-grade N-channel 40 V, 0.85 mΩ typ.,180 A STripFET™ VI DeepGATE™ Power MOSFETs Datasheet - production data Features TAB 2 3 1 H2PAK-2 TAB 7 1 H2PAK-6 Order codes VDS RDS(on) max ID STH400N4F6-2 STH400N4F6-6 40 V 1.15 mΩ 180 A • Designed for automotive applications and AEC-Q101 qualified • Low gate charge • Very low on-resistance • High avalanche ruggedness Figure 1. Internal schematic diagram D(TAB) D(TAB) Applications • Switching applications Description G(1) S(2, 3) H2PAK-2 G(1) S(2, 3, 4, 5, 6, 7) H2PAK-6 AM14551V1 These devices are N-channel Power MOSFETs th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
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