Datasheet4U Logo Datasheet4U.com

STH400N4F6-6 - N-channel Power MOSFET

This page provides the datasheet information for the STH400N4F6-6, a member of the STH400N4F6-2 N-channel Power MOSFET family.

Description

developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.

Features

  • TAB 2 3 1 H2PAK-2 TAB 7 1 H2PAK-6 Order codes VDS RDS(on) max ID STH400N4F6-2 STH400N4F6-6 40 V 1.15 mΩ 180 A.
  • Designed for automotive.

📥 Download Datasheet

Datasheet preview – STH400N4F6-6

Datasheet Details

Part number STH400N4F6-6
Manufacturer STMicroelectronics
File Size 463.35 KB
Description N-channel Power MOSFET
Datasheet download datasheet STH400N4F6-6 Datasheet
Additional preview pages of the STH400N4F6-6 datasheet.

📁 Similar Datasheet

  • STH4010 - 2.5-W MONO FILTER-FREE CLASS-D AUDIO POWER AMPLIFIER (Sitch Semiconductors)
  • STH48D35 - Solid-State Relays (TELEDYNE)
  • STH1061 - NPN Plastic Power Transistor (SEMTECH ELECTRONICS)
  • STH10NA50 - N-CHANNEL Power MOS MOSFET (ST Microelectronics)
  • STH10NA50FI - N-CHANNEL Power MOS MOSFET (ST Microelectronics)
  • STH10NC60 - N-CHANNEL Power MOS MOSFET (ST Microelectronics)
  • STH10NC60FI - N-CHANNEL Power MOS MOSFET (ST Microelectronics)
  • STH110N10F7-2 - N-Channel MOSFET (INCHANGE)
  • STH12N60 - N-Channel Enhancement Mode Fast Power MOS Transistor (ST Microelectronics)
  • STH12N60FI - N-Channel Enhancement Mode Fast Power MOS Transistor (ST Microelectronics)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STH400N4F6-2, STH400N4F6-6 Automotive-grade N-channel 40 V, 0.85 mΩ typ.,180 A STripFET™ VI DeepGATE™ Power MOSFETs Datasheet - production data Features TAB 2 3 1 H2PAK-2 TAB 7 1 H2PAK-6 Order codes VDS RDS(on) max ID STH400N4F6-2 STH400N4F6-6 40 V 1.15 mΩ 180 A • Designed for automotive applications and AEC-Q101 qualified • Low gate charge • Very low on-resistance • High avalanche ruggedness Figure 1. Internal schematic diagram D(TAB) D(TAB) Applications • Switching applications Description G(1) S(2, 3) H2PAK-2 G(1) S(2, 3, 4, 5, 6, 7) H2PAK-6 AM14551V1 These devices are N-channel Power MOSFETs th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
Published: |