STH400N4F6-6 Datasheet | STMicroelectronics

STH400N4F6-2, STH400N4F6-6 Automotive-grade N-channel 40 V, 0.85 mΩ typ.,180 A STripFET™ VI DeepGATE™ Power MOSFETs - production data Features 2 3 H2PAK-2 7 1 H2PAK-6 Order codes RDS(on) max ID STH400N4F6-2 STH400N4F6-6 40 V 1.15 mΩ 180 A - Designed for automotive applications and AEC-Q101 qualified - Low gate charge - Very low on-resistance - High avalanche ruggedness Figure 1. Internal schematic diagram D(TAB) D(TAB) Applications - Switching applications Description G(1) S(2, 3) H2PAK-2 G(1) S(2, 3, 4, 5, 6, 7) H2PAK-6 AM14551V1 These devices are N-channel Power MOSFETs th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a...