STH410N4F7-6AG Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STH410N4F7-2AG STH410N4F7-6AG Table 1: Device summary Marking Package 410N4F7 H²PAK-2 H²PAK-6 Packing Tape And Reel February 2016 DocID027734 Rev.
STH410N4F7-6AG Key Features
- Designed for automotive