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STH80N10LF7-2AG Datasheet

N-channel Power MOSFET

Manufacturer: STMicroelectronics

STH80N10LF7-2AG Overview

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

STH80N10LF7-2AG Key Features

  • AEC-Q101 qualified
  • Among the lowest RDS(on) on the market
  • Excellent FoM (figure of merit)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness

STH80N10LF7-2AG Distributor