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STI18N60M2 Datasheet N-CHANNEL POWER MOSFET

Manufacturer: STMicroelectronics

General Description

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.

Product status link STB18N60M2 STI18N60M2 STP18N60M2 STW

Overview

STB18N60M2, STI18N60M2 STP18N60M2, STW18N60M2 Datasheet N-channel 600 V, 0.255 Ω typ.

Key Features

  • Order codes VDS @ TJmax RDS(on) max. STB18N60M2 STI18N60M2 STP18N60M2 650 V 0.280 Ω STW18N60M2.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected ID 13 A Package D²PAK I²PAK TO-220 TO-247.