STI23NM60N Datasheet - STMicroelectronics

N-channel Power MOSFET

STI23NM60N Features

* www.DataSheet4U.com Type VDSS (@Tjmax) RDS(on) max ID 1 3 3 12 STB23NM60N STI23NM60N STF23NM60N STP23NM60N STW23NM60N 1. Limited only by maximum temperature allowed

* 19 A 19 A 650 V 0.180 Ω 19 A (1) D²PAK 2 1 3 I²PAK 19 A 19 A 3 1 2 TO-247 3 1 2 100% avalanche tested Lo

STI23NM60N General Description

This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding hi.

STI23NM60N Datasheet (595.38 KB)

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STI23NM60N

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STMicroelectronics ↗

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595.38 KB

Description:

N-channel power mosfet.
STB23NM60N-STF23NM60N STI23NM60N-STP23NM60N-STW23NM60N N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh™ .

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STI23NM60N Features

STI23NM60N General Description

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