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STI21NM60ND - N-channel MOSFET

General Description

The FDmesh™ II series belongs to the second generation of MDmesh™ technology.

Key Features

  • Type www. DataSheet4U. com VDSS @ TJmax 650 V 650 V 650 V 650 V 650 V RDS(on) max < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω ID 3 3 1 2 3 1 2 1 STB21NM60ND STI21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND 17 A 17 A 17 A(1) 17 A 17 A TO-220 D2PAK TO-220FP 1. Limited only by maximum temperature allowed.
  • 3 12 2 1 3 The worldwide best RDS(on).
  • area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low ga.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP/F21NM60ND-STW21NM60ND STB21NM60ND-STI21NM60ND N-channel 600 V, 0.17 Ω , 17 A FDmesh™ II Power MOSFET 2 D PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type www.DataSheet4U.com VDSS @ TJmax 650 V 650 V 650 V 650 V 650 V RDS(on) max < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω ID 3 3 1 2 3 1 2 1 STB21NM60ND STI21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND 17 A 17 A 17 A(1) 17 A 17 A TO-220 D2PAK TO-220FP 1. Limited only by maximum temperature allowed ■ ■ ■ ■ ■ 3 12 2 1 3 The worldwide best RDS(on)*area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1.