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STI23NM60N Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STB23NM60N-STF23NM60N STI23NM60N-STP23NM60N-STW23NM60N N-channel 600 V - 0.

General Description

This series of devices is designed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

It is therefore suitable for the most demanding high efficiency converters.

Key Features

  • www. DataSheet4U. com Type VDSS (@Tjmax) RDS(on) max ID 1 3 3 12 STB23NM60N STI23NM60N STF23NM60N STP23NM60N STW23NM60N 1. Limited only by maximum temperature allowed.
  • 19 A 19 A 650 V 0.180 Ω 19 A (1) D²PAK 2 1 3 I²PAK 19 A 19 A 3 1 2 TO-247 3 1 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 TO-220FP Figure 1. Internal schematic diagram.

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