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STI260N6F6 Datasheet - STMicroelectronics

N-channel Power MOSFET

STI260N6F6 General Description

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFETā„¢ DeepGATEā„¢ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. TAB TAB 123 IĀ²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram $ 4!" ' .

STI260N6F6 Datasheet (350.20 KB)

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STI260N6F6 N-channel Power MOSFET STMicroelectronics

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