STI28N60M2 mosfet equivalent, n-channel power mosfet.
Order code STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2
VDS @ TJmax 650 V
RDS(on) max. 0.150 Ω
ID 22 A
Figure 1: Internal schematic diagram
D (2 TAB )
* Extremely.
* Switching applications
* LCC converters, resonant converters
Description
These devices are N-channel Power M.
These devices are N-channel Power MOSFETs
G(1)
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, these devices exhibit low on-resistance
and optimized switching characteristics,
rendering them.
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