Datasheet Summary
Automotive-grade N-channel 40 V, 1.6 mΩ typ., 100 A, STripFET™ F7 Power MOSFET in an LFPAK 5x6 package
TAB 4
3 2 1
LFPAK 5x6
D(TAB)
Features
Order code STK184N4F7AG
V DS 40 V
RDS(on) max. 2.0 mΩ
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Applications
- Switching applications
ID 100 A
G(4)
Description
S(1, 2, 3)
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more...