Datasheet4U Logo Datasheet4U.com

STK28N3LLH5 - N-channel Power MOSFET

Description

This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology.

Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.

Table 1.

Features

  • Type STK28N3LLH5.
  • VDSS 30 V RDS(on) max < 0.0045 Ω RDS(on).
  • Qg 68.4 nC.
  • mΩ Ultra low top and bottom junction to case thermal resistance RDS(on).
  • Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge Fully encapsulated die 100% matte tin finish (in compliance with the 2002/95/EC european directive) High avalanche ruggedness PolarPAK® is a trademark of VISHAY Figure 1. Internal schematic diagram PolarP.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STK200 Flash MCU Starter Kit User Guide Manual Atmel
STK2025 (STKxxxx) Output Stage of AF Power Amp ETC
STK2029 (STKxxxx) Output Stage of AF Power Amp ETC
STK2030 Power Amp ETC
STK2038II POWER AMPLIFIER ETC

Other Datasheets by STMicroelectronics

Part Number Description
STK20N3LLH5 N-channel Power MOSFET
STK224N4F7AG Automotive-grade N-channel Power MOSFET
STK22N6F3 N-Channel Power MOSFET
STK24N4LLF5 Power MOSFET
STK24N4LLH5 N-channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com STK28N3LLH5 N-channel 30 V, 0.0035 Ω , 28 A, PolarPAK® STripFET™V Power MOSFET Preliminary Data Features Type STK28N3LLH5 ■ ■ ■ ■ ■ ■ ■ ■ VDSS 30 V RDS(on) max < 0.0045 Ω RDS(on)*Qg 68.4 nC*mΩ Ultra low top and bottom junction to case thermal resistance RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge Fully encapsulated die 100% matte tin finish (in compliance with the 2002/95/EC european directive) High avalanche ruggedness PolarPAK® is a trademark of VISHAY Figure 1. Internal schematic diagram PolarPAK® Application ■ Switching applications Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology.
Published: |