STL105N4LF7AG Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL105N4LF7AG Table 1: Device summary Marking Package 105N4LF7 PowerFLATTM 5x6 Packing Tape and reel January 2018 DocID029251 Rev 4 This is information on a product...
STL105N4LF7AG Key Features
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
- Wettable flank package