STL12N10F7 mosfet equivalent, n-channel power mosfet.
Order code
VDS
RDS(on) max.
STL12N10F7
100 V
13.3 mΩ
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss/Ciss ratio f.
* Switching applications
1234
AM15810v1
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology w.
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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