Datasheet Summary
N‑channel enhancement mode standard level 100 V, 4.6 mΩ max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
PowerFLAT 5x6
D(5, 6, 7, 8)
8 76 5
G(4)
S(1, 2, 3)
12 34 Top View
GADG09062022
Features
Order code STL120N10F8
VDS 100 V
- MSL1 grade
- 175 °C operating temperature
- 100% avalanche tested
RDS(on) max. 4.6 mΩ
ID 125 A
Applications
- Switching applications
Description
This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure.
It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.
Product status link STL120N10F8
Pro...