STL120N10F8 Description
This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. For engineering samples marking, see Section 3.3 PowerFLAT 5x6 marking information.
STL120N10F8 Key Features
- MSL1 grade
- 175 °C operating temperature
- 100% avalanche tested