Description
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Features
- PowerFLAT 5x6
Order code
VDS
RDS(on) max. STL120N8F7
80 V
4.8 mΩ.
- Among the lowest RDS(on) on the market.
- Excellent FoM (figure of merit).
- Low Crss/Ciss ratio for EMI immunity.
- High avalanche ruggedness
ID 120 A
PTOT 140 W
D(5, 6, 7, 8)
8 76 5.
STL120N8F7 Datasheet
