Description
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Features
- Order code STL125N8F7AG
VDS 80 V
RDS(on) max. 4.5 mΩ.
- AEC-Q101 qualified.
- Among the lowest RDS(on) on the market.
- Excellent FoM (figure of merit).
- Low Crss/Ciss ratio for EMI immunity.
- High avalanche ruggedness.
- Wettable flank package
ID 120 A
G(4).
STL125N8F7AG Datasheet
